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1. product pro?le 1.1 general description standard level n-channel enhancement mode field-effect transistor (fet) in a fully isolated plastic package using trenchmos? technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PHX18NQ11T n-channel trenchmos? standard level fet rev. 02 24 march 2005 product data sheet n standard level threshold n isolated mounting base n low on-state resistance n fast switching n low thermal resistance n lead-free n dc-to-dc converters n switched-mode power supplies n class-d ampli?ers n v ds 110 v n i d 12.5 a n r dson 90 m w n p tot 31.2 w table 1: pinning pin description simpli?ed outline symbol 1 gate sot186a (3-lead to-220f) 2 drain 3 source mb mounting base; isolated 3 2 1 s d g mbb076
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 2 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 3. ordering information 4. limiting values [1] external heatsink connected to mounting base. table 2: ordering information type number package name description version PHX18NQ11T to-220f plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 leads sot186a table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 150 c - 110 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w - 110 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t h =25 c; v gs =10v; figure 2 and 3 [1] - 12.5 a t h = 100 c; v gs =10v; figure 2 [1] - 7.9 a i dm peak drain current t h =25 c; pulsed; t p 10 m s; figure 3 [1] - 50.2 a p tot total power dissipation t h =25 c; figure 1 [1] - 31.2 w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source (diode forward) current (dc) t h =25 c [1] - 12.5 a i sm peak source (diode forward) current t h =25 c; pulsed; t p 10 m s [1] - 50.2 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load; i d = 7.5 a; t p = 0.09 ms; v dd 15 v; r gs =50 w ; v gs = 10 v; starting at t j =25 c -56mj
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 3 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet fig 1. normalized total power dissipation as a function of heatsink temperature fig 2. normalized continuous drain current as a function of heatsink temperature t h =25 c; i dm is single pulse; v gs =10v fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage 03aa13 0 40 80 120 0 50 100 150 200 t h ( c) p der (%) 03aa21 0 40 80 120 0 50 100 150 200 t h ( c) i der (%) p der p tot p tot 25 c () ------------------------ 100 % = i der i d i d25 c () -------------------- - 100 % = 03am62 10 -1 1 10 10 2 1 10 10 2 10 3 v ds (v) i d (a) dc 100 ms 10 ms limit r ds(on) = v ds / i d 1 ms t p = 10 m s 100 m s
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 4 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 5. thermal characteristics [1] external heatsink connected to mounting base. table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-h) thermal resistance from junction to heatsink figure 4 [1] --4k/w fig 4. transient thermal impedance from junction to heatsink as a function of pulse duration 03am61 10 -1 1 10 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-h) (k/w) single pulse d = 0.5 0.2 0.1 0.05 0.02 t p t p t t p t d =
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 5 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 6. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 m a; v gs =0v t j =25 c 110 - - v t j = - 55 c 99--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 and 10 t j =25 c 234v t j = 150 c 1.2 - - v t j = - 55 c - - 4.4 v i dss drain-source leakage current v ds = 100 v; v gs =0v t j =25 c --1 m a t j = 150 c - - 500 m a i gss gate-source leakage current v gs = 10 v; v ds = 0 v - 10 100 na r dson drain-source on-state resistance v gs =10v; i d =9a; figure 6 and 8 t j =25 c - 67 90 m w t j = 150 c - 148 198 m w dynamic characteristics q g(tot) total gate charge i d = 3 a; v dd =80v; v gs =10v; figure 13 -21-nc q gs gate-source charge - 2.5 - nc q gd gate-drain (miller) charge - 8 - nc c iss input capacitance v gs =0v; v ds = 25 v; f = 1 mhz; figure 11 - 635 - pf c oss output capacitance - 105 - pf c rss reverse transfer capacitance - 60 - pf t d(on) turn-on delay time v dd =50v; r l =15 w ; v gs =10v; r g = 5.6 w -6-ns t r rise time -12-ns t d(off) turn-off delay time - 20 - ns t f fall time -10-ns source-drain diode v sd source-drain (diode forward) voltage i s = 12 a; v gs =0v; figure 12 - 0.87 1.2 v t rr reverse recovery time i s = 12 a; di s /dt = - 100 a/ m s; v gs =0v - 55 - ns q r recovered charge - 135 - nc
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 6 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet t j =25 ct j =25 c fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of drain current; typical values t j =25 c and 150 c; v ds >i d r dson fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature 03am63 0 4 8 12 0 0.5 1 1.5 2 v ds (v) i d (a) 4.6 t j = 25 c 10 4.8 5 5.2 4.4 5.4 6 v gs (v) = 03am64 0 0.05 0.1 0.15 0.2 04812 i d (a) r dson ( w ) 10 t j = 25 c 6 5.2 5.4 5 4.8 v gs (v) = 03am65 0 4 8 12 0246 v gs (v) i d (a) t j = 25 c 150 c 03aa29 0 1 2 3 -60 0 60 120 180 t j ( c) a a r dson r dson 25 c () ------------------------------ =
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 7 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage v gs = 0 v; f = 1 mhz fig 11. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03aa32 0 1 2 3 4 5 -60 0 60 120 180 t j ( c) v gs(th) (v) max min typ 03aa35 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0246 v gs (v) i d (a) max typ min 03am67 10 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 8 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 7. isolation characteristics t j =25 c and 150 c; v gs =0v i d = 3 a; v dd = 20 v and 80 v fig 12. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values fig 13. gate-source voltage as a function of gate charge; typical values 03am66 0 4 8 12 0 0.3 0.6 0.9 1.2 v sd (v) i s (a) t j = 25 c 150 c v gs = 0 v 03am68 0 2 4 6 8 10 0 5 10 15 20 25 qg (nc) v gs (v) i d = 3 a t j = 25 c 20 v v dd = 80 v table 6: isolation characteristics symbol parameter conditions min typ max unit v (isol)rms rms isolation voltage from all three terminals to external heatsink f = 50-60 hz; sinusoidal waveform; rh 65 %; clean and dust-free - - 2500 v c (d-h) capacitance from drain to external heatsink -10- pf
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 9 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 8. package outline fig 14. package outline sot186a (3-lead to-220f) references outline version european projection issue date iec jedec jeita sot186a 3-lead to-220f 0 5 10 mm scale plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead to-220 'full pack' sot186a a a 1 q c k j notes 1. terminal dimensions within this zone are uncontrolled. terminals in this zone are not tinned. 2. both recesses are ? 2.5 0.8 max. depth d d 1 l l 2 l 1 b 1 b 2 e 1 e b w m 1 23 q e p t unit d b 1 d 1 e q q p l c l 2 (1) max. e 1 a 5.08 3 mm 4.6 4.0 a 1 2.9 2.5 b 0.9 0.7 1.1 0.9 b 2 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 e 10.3 9.7 2.54 14.4 13.5 t (2) 2.5 0.4 l 1 3.30 2.79 j 2.7 1.7 k 0.6 0.4 2.6 2.3 3.0 2.6 w 3.2 3.0 dimensions (mm are the original dimensions) 02-03-12 02-04-09 mounting base
9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 10 of 12 philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 9. revision history table 7: revision history document id release date data sheet status change notice doc. number supersedes PHX18NQ11T_2 20050324 product data sheet - 9397 750 14444 PHX18NQ11T-01 modi?cations: ? the format of this data sheet has been redesigned to comply with the new presentation and information standard of philips semiconductors. ? t ab le 1 pinning : description corrected ? section 1.2 f eatures and section 1.3 applications : information added PHX18NQ11T-01 20040213 product data - 9397 750 12915 -
philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 9397 750 14444 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 24 march 2005 11 of 12 10. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 12. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 13. trademarks trenchmos is a trademark of koninklijke philips electronics n.v. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 24 march 2005 document number: 9397 750 14444 published in the netherlands philips semiconductors PHX18NQ11T n-channel trenchmos? standard level fet 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 isolation characteristics . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 11 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information . . . . . . . . . . . . . . . . . . . . 11

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